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PDF FGH40T65SHDF Data sheet ( Hoja de datos )
| Número de pieza | FGH40T65SHDF | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGH40T65SHDF
650 V, 40 A Field Stop Trench IGBT
May 2014
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
• Induction Heating, MWO
E
C
G
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 Ω, Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
G
E
FGH40T65SHDF_F155
650
± 20
± 30
80
40
120
120
40
20
60
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
©2014 Fairchild Semiconductor Corporation
FGH40T65SHDF Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
1000
Cies
Coes
100
Common Emitter
VGE = 0 V, f = 1 MHz
Cres
TC = 25oC
10
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
tr
10
5
0
td(on)
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 11. Switching Loss vs.
Gate Resistance
5000
1000
100
0
Eon
Eoff
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200 V
300 V
400 V
9
6
3
0
0 20 40 60 80
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
td(off)
100 tf
10
1
0
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 12. Turn-on Characteristics vs.
Collector Current
100
tr
10
5
20
td(on)
Common Emitter
VGE = 15 V, RG = 6 Ω
TC = 25oC
TC = 175oC
40 60
Collector Current, IC [A]
80
©2014 Fairchild Semiconductor Corporation
FGH40T65SPHDF Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FGH40T65SHDF.PDF ] | |
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