|
|
|
부품번호 | FGA6540WDF 기능 |
|
|
기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FGA6540WDF
650 V, 40 A Field Stop Trench IGBT
April 2015
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for welder and industrial application where low conduction and
switching losses are essential.
Applications
• Welder and Industrial Application
• Power Factor Correction
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 60 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2015 Fairchild Semiconductor Corporation
FGA6540WDF Rev. 1.1
1
C
G
E
FGA6540WDF
650
20
30
80
40
120
120
40
20
120
238
119
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
©2015 Fairchild Semiconductor Corporation
FGA6540WDF Rev. 1.1
4
www.fairchildsemi.com
4페이지 Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22.Transient Thermal Impedance of Diode
PDM
t1
t2
©2015 Fairchild Semiconductor Corporation
FGA6540WDF Rev. 1.1
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ FGA6540WDF.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGA6540WDF | IGBT ( Insulated Gate Bipolar Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |