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PDF FGA40T65SHDF Data sheet ( Hoja de datos )
| Número de pieza | FGA40T65SHDF | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA40T65SHDF
650 V, 40 A Field Stop Trench IGBT
April 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
• Induction Heating, MWO
C
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 , Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
G
E
FGA40T65SHDF
650
20
30
80
40
120
120
40
20
60
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA40T65SHDF.PDF ] | |
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