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PDF MMBT3904EF Data sheet ( Hoja de datos )
| Número de pieza | MMBT3904EF | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | KODENSHI | |
| Logotipo |  |
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MMBT3904EF
NPN Silicon Transistor
Descriptions
• Small signal application
• Switching application
Features
• Low collector saturation voltage
• Low collector output capacitance
• Complementary pair with MMBT3906EF
PIN Connection
1
2
3
Ordering Information
Type NO.
MMBT3904EF
Marking
Package Code
Z□
①②
①Device Code ② Year&Week Code
SOT-523F
SOT-523F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
60
40
6
200
150
150
-55~150
Ta=25°C
Unit
V
V
V
㎃
㎽
℃
℃
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitterbreakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on delay time
Rise time
Storage time
Fall Time
Symbol
BVCBO
BVCEO
BVEBO
ICEX
hFE
VCE(sat)
fT
Cob
td
tr
ts
tf
Test Condition
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCE=30V, VBE=-3V
VCE=1V, IC=10mA
IC=50mA, IB=5mA
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0, f=1MHz
VCC=3V, VBE(off)=0.5V
IC=10mA, IB1=1mA
VCC=3V,IC=10mA,
IB1=-IB2=1mA
Min.
60
40
6
-
100
-
300
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Max. Unit
-V
-V
-V
50 ㎁
300 -
0.3 V
-㎒
4㎊
35 ㎱
35 ㎱
200 ㎱
50 ㎱
KSD-T5E009-000
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT3904EF.PDF ] | |
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