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PDF TMM2764ADI-15 Data sheet ( Hoja de datos )
| Número de pieza | TMM2764ADI-15 | |
| Descripción | UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY | |
| Fabricantes | Toshiba | |
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TOSHIBA MOS MEMORY PRODUCT
8,192 WORD X 8 BIT UV ERASABLE AND
ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM2764ADI-15
TMM2764ADI-20
DESCRIPTION
The TMM2764AOI is a 8192 word x 8bit ultra-
violet light erasable and electrically programmable
read only memory. For read operation, the
TMM2764AO's access time is 150/200ns and the
TMM2764AOI operates from a single 5-volt power
supply and has a low power standby mode which
reduces the power dissipation without increasing
access time.
FEATURES
I-15
-20
Vee 5V±5%
ItAee
150ns
200ns
lee2 100mA
Icel 30mA
The standby mode is achieved by applying a TIL-
high level signal to the CE input.
For program operation, the programming is
achieved by using the high speed programming
mode.
The TMM2764AOI is fabricated with the Nchan-
nel silicon double layer gate MaS technology.
• Wide operating temparature range -40-85"C
• Fully static operation
• High speed programming mode
• Single location programming
• Three state outputs
• Inputs and outputs TIL compatible
• Pin compatible with i2764A
PIN CONNECTION (TOP VIEW)
Vpp 1
A12 2
VCC
roM
A7 3
N.C.
A6 4
A5
AS
Ag
A4 6
A3
All
DE
A2 AIO
Al CE
AO °7
00 06
°1 °5
°2 °4
aND L...-_ _
03
~
PIN NAMES
Ao-A14
00-07
CE
OE
PGM
N. C.
Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Output Enable Input
Program Control Input
No Connection
Program Supply Voltage
Vee Supply Voltage (+ 5V)
Ground
BLOCK DIAGRAM
Vpp GND Vee
5E<>---<'--~-:::!~--!"==-t
CE
roM .,......,_.--_ _--,.--'
~~MODE
PGM CE OE Vpp Vee
00-07
(27) (20) (22) (1) (28) (11-13,15-19)
Read
H LL
Data Out
Output
Deselect
* * H 5V 5V High Impedance
Standby
Program
Program
Inhibit
*H *
High Impedance
LL*
Data In
* *H High Impedance
12.5V 6V
H LH
High Impedance
Program
Verify
H LL
* :Note
H or L
Data Out
POWER
Active
Standby
Active
- 0-17 -
1 page  
TM M2764AD 1-15
TMM2764ADI-20
ADDRESSES
CE
OE
PGM
Vpp
DIN STABLE
tDS
PROGRAM
PROGRAM
VERIFY
INITIAL PROGRAM
PROGRAM
ADDITIONAL PROGRAM
Note: 1. Vee must be applied simultaneously or ~efore Vpp and cut off simultaneously or after VPP.
2. Removing the device from socket and senlng the device in socket with Vpp = i 2. 5V may cause permanent
damage to the device.
3. The Vpp supply voltage is permined up to 14V for program operation, so the voltage over 14,v should not be
applied to the Vpp terminal.
When the switching pulse voltage is applied to the Vpp terminal, the overshoot voltage of its pulse should not
be exceeded 14V
- 0-21 -
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