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TMM27256AD-15 데이터시트 PDF




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부품번호 TMM27256AD-15 기능
기능 N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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TMM27256AD-15 데이터시트, 핀배열, 회로
TOSHIBA MOS MEMORY PRODUCT
32,76B WORD X B BIT N-MOS UV ERASABLE AND
ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TMM27256AD-15, TMM27256AD-150
SILICON STACKED GATE MOS
TMM27256AD-20, TMM27256AD-200
DESCRIPTION
The TMM2 7256AD is a 32,768 word x 8 bit
ultraviolet light erasable and electrically program-
mable read only memory,
For read operation, the TMM27256AD's access
time is 150ns/200ns, and the TMM27256AD oper-
ates from a single 5-volt power supply and has low
power standby mode which reduces the power dis-
sipation without increasing a'ccess time, The standby
mode is achieved by applying a TIL-high level signal
to the CE input.
For program operation, the programming is
achieved by using the high speed programming
mode.
The TMM27256AD is fabricated with the N-chan-
nel silicon double layer gate MaS technology,
FEATURES
I Vee
~lee2
Icel
I-15
-20
5V±5%
I150ns
200ns
100mA
30mA
I-150
-200
5V±10%
150ns , 200ns
120mA
35mA
• Full static operation
• High speed programming mode
• Inputs and outputs TIL compatible
• Pin compatible with i 27256
• Standard 28 pin DIP cerdip package
PIN CONNECTION (TOP VIEW)
A5
A4
AO
00
01
02
OND
Vee
AU
A13
AS
A9
All
6E
A10
CE
07
06
05
04
03
BLOCK DIAGRAM
Vpp OND Vee
00 01 0203 04 05 06 07
AO
Al
A2
A3
A4
A5
A6
A7
AS
A9
AlO
All
A12
A13
A14
PIN NAMES
MODE SELECTION
Ao-A14
00-07
CE
OE
Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Output Enable Input
Program Supply Voltage
Vee Supply Voltage (+5V)
Ground
~MODE
CE
(20)
Read
L
Output
Deselect
*
Standby
H
Program
L
Program
Inhibit
H
Program
Verify
*
* :Note H or L
OE Vpp Vee
(22) (1) (28)
L
H 5V 5V
*
H
* 12,5V 6V
L
00-07
(11-13,15-19)
Da~ Out
High Impedance
High Impedance
Data In
High Impedance
Data Out
POWER
Active
Standby
Active
- 0-49 -




TMM27256AD-15 pdf, 반도체, 판매, 대치품
TMM27256AO-15, TMM27256AO-150
TMM27256AO-20, TMM27256AD-200
A.C. PROGRAMMING CHARACTERISTICS (Ta=25±5'C, Vee=6V±0.25V, Vrp=12.5V±0.5V)
SYMBOL
tAS
tAH
PARAMETER
Address Setup Time
Address Hold Time
TEST CONDITION
:=
I MIN. TYP. IMAx~rUNiTl
~ := i :=j~:~~
teEs CE Setup Time
- 0 - I - i ns
~------~==--~------------------~--------------------------------+----r'--~I-----r-----
teEH CE Hold Time
tOES OE Setup Time
:=-~
0
I2 I
ti ;._l=~nss
tos Data Setup Time
- 2 1 - -._~
1,
i
tOH Data Hold Time
tvps Vpp Setup Time
- 2 I )lSi
- 2 - I -i--;si
r--
-1----'----1
~--t~ve-s-+_--V-e-e~S-e-tu-p-T-i-m-e-----------~----------==~-------------------+_-2---t---- i - +--£~_~
~---tp-w--+---In-it-ia-l -P-ro=g-ra-m--P-u-ls-e-W--id-t-h------~-----------C--E-=-V-IL-,O--E-=-V-IH-----.---+-.1-0-.-9-5-1I.
f
-
1
---
;1.0
h;::
5
:
I
ms I
- -....j
~_t_op_w___+
--O:=ve_r_pr--o=gc_ra_m_
Pulse Width
_________
__
_
__
_~---------------=N=0=-t-e-1.--------------+-?-_8.51
3
:78. ~~~__.~
.- ,'-~---tO-E --+-=b-E-t-o-O~-ut-p-ut-V-a-li-d-----------1-------------C-CEE-===V-IHV-'-H-----------+----t--i -1-5I01I3OIn~s-~:;
j -=--1-.=._1_____________ ____-=--____________"______________________________1 tDEF I! OE to Ou~tput In Hlgh-Z
..1._____ .-.-1
A C Test Conditions
• Output Load
• Input Pulse Rise and Fall Times
• Input Pulse Levels
• Timing Measurement Reference Level
1 TIL Gate and CL (1 OOpF)
10ns Max.
0.45V to 2.4V
Input 0.8V and 2.0V, Output 0.8V and 2.0V
Note: 1. The length of the overprogram pulse may vary as a function of the counter value X.
TIMING WAVEFORMS (PROGRAM)
(VCC=6V±O.Z5V. Vpp=lZ.5V±O.5V)
AO-14
eE
00- 07
)<
~
tpw
I
1\~V
~~
~
~
1\
tos -I-~
a STABLE 1\
tOE
'I
I
I
XX~
K=
tAH
tOFP
DOUT YALIO
11\
Ypp
I
tyPS
1
I
Yee
tyes
I
PROGRAM
PROGRAM YER I FY
Note: 1. Vee must be applied simultaneously or before Vpp and cut off simultaneously or after VPP.
2. Removing the device from socket and setting the device in socket with Vpp = 12. 5V may cause permanent
damage to the device.
3. The Vpp supply voltage is permitted up to 14V for program operation, so the voltage over 14V should not be
applied to the Vpp terminal. When the switching pulse voltage is applied to the Vrp terminal, the overshoot
voltage of its pulse should not be exceeded 14V.
- 0-52 -

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TMM27256AD-15 전자부품, 판매, 대치품
HIGH SPEED PROGRAM MODE FLOW CHART
TMM27256AO-15, TMM27256AD-150
TMM27256AO-20, TMM27256AD-200
ADDRESS=
NEXT ADDRESS
OVERPROGRAM 3X PULSES OF 1 msec
OR ONE PULSE OF 3~ mS6C DURATION
NO
- 0-55 -

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관련 데이터시트

부품번호상세설명 및 기능제조사
TMM27256AD-15

N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Toshiba
Toshiba
TMM27256AD-150

N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Toshiba
Toshiba

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