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TMM27256ADI-20 데이터시트 PDF




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부품번호 TMM27256ADI-20 기능
기능 N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
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TMM27256ADI-20 데이터시트, 핀배열, 회로
TOSHIBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT N·MOS UV ERASABLE AND
ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
SILICON STACKED GATE MOS
TMM27256ADI-15
TMM27256ADI-20
DESCRIPTION
The TMM27256ADI is a 32,768 word x 8 bit
ultraviolet light erasable and electrically program·
mabie read only memory.
For read operation, The TMM27256ADI's access
time is 150ns/200ns, and the TMM27256ADI oper-
ates from a single 5-volt power supply and has low
power standby mode which reduces the power dis-
sipation without increasing access time. The standby
mode is achieved by applying a TIL-high level signal
to the CE input.
For program operation, the programming is
achieved by using the high speed programming
mode.
The TMM27256ADI is fabricated with the N-chan-
nel silicon double layer gate MaS technology.
FEATURES
Vee
tAee
1eC2
lee 1
-15
150ns
I
5V±5%
I
100mA
30mA
'-
-20
200ns
• Wide operating temparature range -40-85°C
• Full static operation
• High speed programming mode
• Inputs and outputs TTL compatible
• Pin compatible with i27256
• Standard 28 pin DIP cerdip package
PIN CONNECTION (TOP VIEW)
Vee
AU
Al3
AS
A5 A9
A4 All
A3 DE
A2 AIO
BE
07
00 06
01 05
02 04
OND 03
BLOCK DIAGRAM
Vpp OND Vee
00 01 0203 O. 05 06 07
AO
Al
A2
~:!
A4
A5
A6
A7
AS
A9
AlO
All
A12
AI:!
Al4
PIN NAMES
MODE SELECTION
AO-'A14
00-07
CE
OE
Vpp
Vee
GND
Address Inputs
Outputs (Inputs)
Chip Enable Input
Output Enable Input
Program Supply Voltage
Vee Supply Voltage (+ 5V)
Ground
~MODE
CE
(20)
Read
L
Output
Deselect
*
Standby
H
Program
L
Program
Inhibit
H
Program
Verify
*
* .Note H or L
OE Vpp Vee
(22) (1) (28)
L
H 5V 5V
*
H
* 12.5V 6V
L
00-07
(11-13,15-19)
Data Out
High Impedance
High Impedance
Data In
High Impedance
Data Out
POWER
Active
Standby
Active
- 0-57 -




TMM27256ADI-20 pdf, 반도체, 판매, 대치품
TMM27256ADI-15
TM M27256AD 1-20
A. C. PROGRAMMING CHARACTERISTICS (Ta=25±5'C. Vee=6V±0.25V. Vpp=12.5V±0.5V)
SYMBOL
PARAMETER
tAS Address Setup Time
tAH Address Hold Time
tCES CE Setup Time
tCEH CE Hold Time
tors OE Setup Time
tos Data Setup Time
tOH Data Hold Time
t=1vps
I tves
tpw
Vpp Setup Time
Vee Setup Time
Initial Program Pulse Width
topw Overprogram Pulse Width
I tOf
I
l tmF
OE to Output Valid
I OE to Output In High-Z
I
A C Test Conditions
• Output Load
• Input Pulse Rise and Fall Times
• Input Pulse Levels
• Timing Measurement Reference Level
TEST CONDITION
-
-
-
-
-
-
-
-
-
CE=VIL.OE=VIH
Note 1
CE =VIH
CE =VIH
1 TIL Gate and CL (1 OOpF)
10ns Max.
0.45V to 2.4V
Input 0.8V and 2.0V. Output 0.8V and 2.0V
MIN. TYP. MAX. UNIT
2-
-
J.ls
2-
0-
-
-
Jn.lsS' -
0-
-
ns
2- -
J.lS
2-
-
J.lS
2-
-
J.lS
2-
2-
-
-
J.-ls -
J.ls
0.95
2.85
-
--
~1 1.05
3 78.75
-- 150
ms
ns
-- 130
~~~J
Note: 1. The length of the overprogram pulse may vary as a function of the counter value X .
.TIMiNGWA"EFORMS (PROGRAM)
(VCC=6V±O.25V, Vpp=12.5V±O.5V)
AO-14
DO - 07
vpp
Vee
Note: 1. Vee must be applied simultaneously or before Vpp and cut off simultaneously or after VPP.
2. Re'moving the device from socket and setting the device in socket with Vpp= 12. 5V may cause permanent
damage to the device.
3. The Vpp supply voltage is permitted up to 14V for program operation. so the voltage over 14V should not be
applied to the Vpp terminal. When the switching pulse voltage is applied to the Vpp terminal. the overshoot
voltage of its pulse should not be exceeded 14V
- 0-60 -

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TMM27256ADI-20 전자부품, 판매, 대치품
HIGH SPEED PROGRAM MODE FLOW CHART
TMM27256ADI-15
TMM27256ADI-20
ADDRESS=
NEXT ADDRESS
OVERPROORAM 3X PULSES OF 1 mS8C
OR ONE PULSE OF 3X mS8C DURATION
NO
- 0-63 -

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부품번호상세설명 및 기능제조사
TMM27256ADI-20

N-MOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY

Toshiba
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