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부품번호 | FQPF10N60 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Oucan Semi | ||
로고 | |||
전체 7 페이지수
FQP10N60-FQPF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The FQP10N60 & FQPF10N60 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
40A
< 0.7Ω
23nC
3.4µJ
TO-220
Top View
TO-220F
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP10N60 FQB10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C,J
Repetitive avalanche energy C,J
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
10 10*
ID 6.6 6.6*
IDM
IAR
EAR
EAS
dv/dt
40
10
50
480
50
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
208 43
1.7 0.34
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
FQP10N60
65
0.5
0.6
FQB10N60
65
--
2.9
FQPF10N60
10*
6.6*
32
0.26
FQPF10N60
65
--
3.9
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10000
12
VDS=480V
ID=10A
1000
9
100
6
10
3
Ciss
Coss
Crss
0
0
10
8 16 24 32
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
1
0.1
15
1 10 100
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
8
6
Eoss
4
2
0
0 100 200 300 400 500 600
VDS (Volts)
Figure 9: Coss stored Energy
12
9
6
3
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 10: Current De-rating (Note B)
Page 4 of 7
4페이지 +
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L2
EAR= 1/2 LI AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
Vdd
Page 7 of 7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ FQPF10N60.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FQPF10N60 | N-Channel MOSFET | Oucan Semi |
FQPF10N60C | 600V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |