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Número de pieza | SiR432DP | |
Descripción | N-Channel 100-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SiR432DP (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! N-Channel 100-V (D-S) MOSFET
SiR432DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
0.0306 at VGS = 10 V
0.0327 at VGS = 7.5 V
ID (A)a
28.4
27.5
Qg (Typ.)
15.5 nC
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: SiR432DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
28.4
22.7
8.6b, c
6.9b, c
40
40g
4.2b, c
17
14.5
54
34.7
5.0b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
20
1.8
25
°C/W
2.3
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
32
SiR432DP
Vishay Siliconix
24
16
8
70
60
50
40
30
20
10
0
0
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.4
1.8
1.2
0.6
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65163
S09-1494-Rev. A, 10-Aug-09
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SiR432DP.PDF ] |
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