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Número de pieza | SMN18T50FD | |
Descripción | Advanced N-Ch Power MOSFET | |
Fabricantes | KODENSHI KOREA | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SMN18T50FD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SMN18T50FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS = 500V
Low gate charge: Qg=65nC (Typ.)
Low drain-source On resistance: RDS(on)=0.21Ω (Typ.)
100% avalanche tested
RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMN18T50FD
SMN18T50
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AUAKUK
SMNF1ΔY8YMTMD5DD0 D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) FYMDD
-. F: Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Peak diode recovery dv/dt (Note 3)
VDSS
VGSS
ID Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
dv/dt
Junction temperature
Storage temperature range
TJ
Tstg
* Drain current limited by maximum junction temperature
Rev. date: 27-MAR-13
KSD-T0O097-001
Rating
500
30
18
11.4
72
900
18
4.8
48
4.5
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
V/ns
C
C
www.auk.co.kr
1 of 8
1 page Fig. 12 Gate Charge Test Circuit & Waveform
SMN18T50FD
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 27-MAR-13
KSD-T0O097-001
www.auk.co.kr
5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SMN18T50FD.PDF ] |
Número de pieza | Descripción | Fabricantes |
SMN18T50FD | Advanced N-Ch Power MOSFET | KODENSHI KOREA |
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