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PDF JCS9N50F Data sheet ( Hoja de datos )
| Número de pieza | JCS9N50F | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de JCS9N50F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS9N50F
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
VDSS
Rdson-max
（@Vgs=10V）
Qg-typ
用途
高频开关电源
电子镇流器
UPS 电源
8A
500 V
0.8 Ω
59 nC
APPLICATIONS
High efficiency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
UPS
产品特性
低栅极电荷
低CrssB B (典型值 35pF)
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low CrssB B (typical 35pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
印记
Order codes
Marking
JCS9N50F-O-F-N-B JCS9N50F
封装
Package
TO-220MF
无卤素
Halogen Free
否 NO
包装
Packaging
条管 Tube
器件重量
Device Weight
2.20 g(typ)
版本：201510B
1/8
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS9N50F
On-Region Characteristics
Transfer Characteristics
VGS
Top 15V
10V
8V
7V
6.5V
6V
10 5.5V
Bottom 5V
10
150℃
Notes：
1. 250μs pulse test
2. TC=25℃
1
1 10
VDS[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90 VGS=10V
0.85
0.80 VGS=20V
0.75
0.70
0.65
0
Note ：Tj=25℃
5 10
I D [A]
15
Capacitance Characteristics
1
25℃
Notes：
1.250μs pulse test
2.VDS=40V
0.1
2468
V GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
25℃
1
150℃
Notes：
1. 250μs pulse test
2. VGS=0V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V SD [V]
Gate Charge Characteristics
12
V =400V
10 DS
V =250V
DS
8 V =100V
DS
6
4
2
0
0 10 20 30 40 50 60
Q Toltal Gate Charge [nC]
g
版本：201510B
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JCS9N50F.PDF ] | |
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