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PDF SNN0630Q Data sheet ( Hoja de datos )
| Número de pieza | SNN0630Q | |
| Descripción | Advanced N-Ch Trench MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SNN0630Q
Advanced N-Ch Trench MOSFET
Portable Equipment Application
Features
Low On-state resistance: 28m at VGS = 10V, ID = 2.9A
Low gate charge: Qg= 4.5nC (Typ.)
High performance trench technology for extremely low RDS(on)
100% avalanche tested
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
G
D
S
SNN0630Q
SNN0630
SOT-223
D
SOT-223
Marking Information
SNN0630
YWW
Column 1: Device Code
Column 2: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=70C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating
30
20
5.8
4.64
23.2
72
5.8
0.2
2
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Rev. date: 23-NOV-12
KSD-T5A015-000
www.auk.co.kr
1 of 8
1 page  
Fig. 12 Gate Charge Test Circuit & Waveform
SNN0630Q
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 23-NOV-12
KSD-T5A015-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SNN0630Q.PDF ] | |
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