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PDF SMK0465IS Data sheet ( Hoja de datos )
| Número de pieza | SMK0465IS | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK0465IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-source breakdown voltage: BVDSS=650V
• Low gate charge: Qg=11.2nC (Typ.)
• Low drain-source On-resistance: RDS(on)=3Ω (Max.)
• RoHS compliant device
• Halogen free package
Ordering Information
Part Number
Marking
Package
SMK0465IS
SMK0465
I-PAK
(Short lead)
GDS
I-PAK (Short Lead)
Marking Information
SMK
0465
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche current (Note 2)
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID Tc=25°C
Tc=100°C
IDM
IAR
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 16-JUL-12
KSD-T6Q016-000
Rating
650
±30
4
2.5
16
4
81.5
4
3.4
48
150
-55~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
°C
°C
www.auk.co.kr
1 of 8
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0465IS
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Rev. date: 16-JUL-12
KSD-T6Q016-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK0465IS.PDF ] | |
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