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Número de pieza | HMC441 | |
Descripción | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER | |
Fabricantes | Hittite Microwave | |
Logotipo | ||
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Typical Applications
The HMC441 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radios
• VSAT
• LO Driver for HMC Mixers
• Military EW & ECM
HMC441
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Features
Gain: 15.5 dB
Saturated Power: +22 dBm @ 23% PAE
Single Supply Voltage:
+5V w/ Optional Gate Bias
50 Ohm Matched Input/Output
Die Size: 0.94 x 0.94 x 0.1 mm
Functional Diagram
General Description
The HMC441 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between 6
and 18 GHz*. The amplifier provides 15.5 dB of gain,
+22 dBm of saturated power, and 23% PAE from a
+5V supply voltage. An optional gate bias is provided
to allow adjustment of gain, RF output power, and DC
power dissipation. The HMC441 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due
to its small size. The backside of the die is both RF
and DC ground, simplifying the assembly process
and reducing performance variation. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Vgg1, Vgg2: Optional Gate Bias
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
Min. Typ. Max.
7.0 - 8.0
13 15.5
0.015 0.02
10
14
Min. Typ. Max.
8.0 - 12.5
14 16.5
0.015 0.02
13
17
Min. Typ. Max.
12.5 - 14.0
13 15.5
0.015 0.02
15
23
Min. Typ. Max.
14.0 - 15.5
12 14.5
0.015 0.02
14
18
Units
GHz
dB
dB/ °C
dB
dB
15.5 18.5
16 19
17 20
17 20
dBm
17 20
18 21
19 22
29 31 32
5.0 4.5 4.5
90 115
90 115
90
19 22
dBm
32 dBm
4.5 dB
90 115
mA
*Contact HMC for Electrical Spec Limits for 6-7 & 15.5 - 18 GHz.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page v07.0913
HMC441
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number
Function
1 RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Pin Schematic
2, 3
Vdd1, Vdd2
Power Supply Voltage for the amplifier. An external
bypass capacitor of 100 pF is required.
4 RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Optional gate control for amplifier. If left open, the
5, 6
Vgg1, Vgg2
amplifier will run at standard current. Negative voltage
applied will reduce current.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HMC441.PDF ] |
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