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부품번호 | HP8S36 기능 |
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기능 | 30V Nch+Nch Middle Power MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 19 페이지수
HP8S36
30V Nch+Nch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Nch
30V 30V
8.8mΩ 2.4mΩ
±27A ±80A
22W 29W
lFeatures
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
4) Built in Schottky-barrier diode(Tr2)
lOutline
HSOP8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
HP8S36
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Nch
Unit
Drain - Source voltage
VDSS
30 30
V
Continuous drain current
ID*1
±27 ±80
A
ID
±12 ±32
A
Pulsed drain current
IDP*2
±48 ±128
A
Gate - Source voltage
VGSS
±20 ±12
V
Avalanche current, single pulse
IAS*3
12 32
A
Avalanche energy, single pulse
EAS*3
5.3 39.3
mJ
Power dissipation
element
total
PD*1
22 29
W
PD*4 3.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/16
20160515 - Rev.001
HP8S36
lGate charge characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
<Tr2>
Qg*5
Qgs*5
Qgd*5
VDD ⋍ 15V, ID = 12A
VGS = 4.5V
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*5
Qgs*5
Qgd*5
VDD ⋍ 15V, ID = 32A
VGS = 4.5V
Datasheet
Values
Min. Typ. Max.
- 4.8 -
- 2.3 -
- 1.1 -
Unit
nC
Values
Min. Typ. Max.
- 47 -
- 19 -
- 9.5 -
Unit
nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS
ISP*2
VSD*5
trr*5
Qrr*5
Ta = 25℃
VGS = 0V, IS = 2.5A
IS = 12A, VGS = 0V
di/dt = 100A/μs
- - 2.5
- - 48
- - 1.2
- 21.4 -
- 11.8 -
<Tr2>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS
ISP*2
VSD*5
trr*5
Qrr*5
Ta = 25℃
VGS = 0V, IS = 2A
IS = 32A, VGS = 0V
di/dt = 100A/μs
- - 2.5
- - 128
- 0.6 0.8
- 32 -
- 23 -
Unit
A
V
ns
nC
Unit
A
V
ns
nC
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/16
20160515 - Rev.001
4페이지 HP8S36
lElectrical characteristic curves <Tr1>
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
7/16
20160515 - Rev.001
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
HP8S36 | 30V Nch+Nch Middle Power MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |