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부품번호 | K20E60U 기능 |
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기능 | TK20E60U | ||
제조업체 | Toshiba | ||
로고 | |||
전체 6 페이지수
TK20E60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK20E60U
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.165 (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
20
40
190
144
15
19
150
−55~150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10V1A
Weight : 1.35 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
0.658
83.3
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.12 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2010-02-10
RDS (ON) – Tc
0.5
Common source
VGS = 10 V
Pulse test
0.4
ID = 20 A
0.3 10
5
0.2
0.1
0
−80 −40 0 40 80 120 160
Case temperature Tc (°C)
TK20E60U
100
Common source
Tc = 25°C
Pulse test
IDR − VDS
10
10
5
1
3
1 VGS = 0 V
0.1
0 0.4 0.8 1.2 1.6
Drain−source voltage VDS (V)
100000
C – VDS
10000
1000
100
Ciss Ciss
Coss Coss
10 Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1 1
Crss Crss
10 100
Drain−source voltage VDS (V)
Vth − Tc
5
4
3
2
Common source
1 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40 0 40 80 120
Case temperature Tc (°C)
160
PD − Tc
250
200
150
100
50
0
0 40 80 120 160
Case temperature Tc (°C)
500
VDS
400
300
200
100
Dynamic input/output
characteristics
Common source 20
ID = 20 A
Tc = 25°C
Pulse test
16
200V
VDD = 100V
400V
VGS
12
8
4
00
0 10 20 30 40
Total gate charge Qg (nC)
4 2010-02-10
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
K20E60U | TK20E60U | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |