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부품번호 | R6008MND3 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
R6008MND3
Nch 600V 8A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.610Ω
ID
±8A
TO-252
PD
115W
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6008M
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±8 A
Pulsed drain current
IDP*2 ±24 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.25 A
Avalanche energy, single pulse
EAS*3
0.42 mJ
Power dissipation (Tc = 25°C)
PD 115 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.002
R6008MND3
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Continuous forward
current
Pulse forward current
Symbol
Conditions
IS*1
TC = 25℃
ISP*2
Min.
-
-
Values
Typ.
-
-
Max.
8
24
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD*3
trr*3
Qrr*3
Irrm*3
VGS = 0V, IS = 8A
IS = 8A
di/dt = 100A/μs
- - 1.5
40 65 90
120 200 280
---
Unit
A
A
V
ns
nC
A
lTypical transient thermal characteristics
Symbol
Value
Unit
Rth1 0.2694
Rth2 3.009
K/W
Rth3 24.88
Rth4 78.50
Symbol
Cth1
Cth2
Cth3
Cth4
Value
0.003122
0.05215
0.1771
0.006860
Unit
Ws/K
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/11
20160725 - Rev.002
4페이지 R6008MND3
lElectrical characteristic curves
Datasheet
Fig.9 Normalized Gate Threshold Voltage.
vs Junction Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.12 Normalized Static Drain - Source
On - State Resistance
vs. Junction Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
7/11
20160725 - Rev.002
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부품번호 | 상세설명 및 기능 | 제조사 |
R6008MND3 | MOSFET ( Transistor ) | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |