|
|
|
부품번호 | R8008ANJ 기능 |
|
|
기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 14 페이지수
R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
800V
0.98W
8A
40W
lOutline
LPT(S)
(SC-83)
(2)
(1)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R8008ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAS*3
PD
Tj
Tstg
dv/dt *5
800
8.0
4.3
32
30
4.2
3.4
4.0
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.10 - Rev.A
R8008ANJ
Data Sheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Unit
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Pwak rate of fall of reverse
recovery current
IS *1
ISM *2
Tc = 25°C
VSD *6
trr *6
Qrr *6
Irrm *6
VGS = 0V, IS = 8.0A
IS = 8.0A
di/dt = 100A/ms
dirr/dt Tj= 25°C
- - 8A
- - 32 A
- - 1.5 V
- 645 -
ns
- 7.3 - mC
- 22 -
A
- 700 - A/ms
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 0.0676
Rth2
0.259
K/W
Rth3 0.607
Symbol
Cth1
Cth2
Cth3
Value
0.00214
0.00771
0.196
Unit
Ws/K
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
4/13
2013.10 - Rev.A
4페이지 R8008ANJ
lElectrical characteristic curves
Fig.6 Typical Output Characteristics(I)
4
VGS= 10.0V
VGS= 8.0V
3
2
Ta=25ºC
Pulsed
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
1
VGS= 5.5V
0
012345
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.7 Typical Output Characteristics(II)
8
7
VGS= 10.0V
VGS= 8.0V
Ta=25ºC
Pulsed
6 VGS= 7.0V
5
4
VGS= 6.5V
3
2
VGS= 6.0V
1
VGS= 5.5V
0
0 10 20 30 40 50
Drain - Source Voltage : VDS [V]
Fig.8 Tj = 150°C Typical Output
Characteristics(I)
4
Ta=150ºC VGS= 10.0V
Pulsed
VGS= 8.0V
3
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
2 VGS= 5.5V
1 VGS= 5.0V
VGS= 4.5V
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(II)
8
7
VGS= 10.0V
VGS= 8.0V
Ta=150ºC
Pulsed
6 VGS= 7.0V
5
4 VGS= 6.5V
3 VGS= 6.0V
2 VGS= 5.5V
1 VGS= 4.5V VGS= 5.0V
0
0 10 20 30 40 50
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
7/13
2013.10 - Rev.A
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ R8008ANJ.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
R8008ANJ | Power MOSFET ( Transistor ) | ROHM Semiconductor |
R8008ANX | Nch 800V 8A Power MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |