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PDF RF4E100AJ Data sheet ( Hoja de datos )
| Número de pieza | RF4E100AJ | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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RF4E100AJ
Nch 30V 10A Middle Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
30V
12.4mΩ
±10A
2.0W
lFeatures
1) Low on - resistance.
2) High power small mold package
(HUML2020L8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen free
5) 100% Rg and UIS tested.
lOutline
DFN2020-8S
HUML2020L8
lInner circuit
lPackaging specifications
Packing
Reel size (mm)
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
DC/DC converter
Taping code
Battery switch
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
Tj
Tstg
30
±10
±36
±12
2.7
6.7
2.0
150
-55 to +150
Embossed
Tape
180
8
3000
TCR
HV
Unit
V
A
A
V
A
mJ
W
℃
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20151130 - Rev.001
1 page  
RF4E100AJ
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20151130 - Rev.001
5 Page 
RF4E100AJ
lDimensions
Datasheet
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/11
20151130 - Rev.001
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet RF4E100AJ.PDF ] | |
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