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Número de pieza | RQ6E050AJ | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RQ6E050AJ (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! RQ6E050AJ
Nch 30V 5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
35mΩ
±5.0A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
SOT-457T
SC-95
TSMT6
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
HU
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
PD*4
Tj
Tstg
30
±5.0
±18
±12
5.0
1.9
1.25
0.95
150
-55 to +150
V
A
A
V
A
mJ
W
W
℃
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160515 - Rev.002
1 page RQ6E050AJ
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160515 - Rev.002
5 Page RQ6E050AJ
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160515 - Rev.002
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet RQ6E050AJ.PDF ] |
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