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PDF RQ6E085BN Data sheet ( Hoja de datos )
| Número de pieza | RQ6E085BN | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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RQ6E085BN
Nch 30V 8.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
14.4mΩ
±8.5A
1.25W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT6).
3) Pb-free lead plating ; RoHS compliant
lOutline
SOT-457T
SC-95
TSMT6
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
AB
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*4
PD*5
Tj
Tstg
30
±8.5
±18
±20
8.5
25.8
1.25
0.95
150
-55 to +150
V
A
A
V
A
mJ
W
W
℃
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160411 - Rev.000
1 page  
RQ6E085BN
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160411 - Rev.000
5 Page 
RQ6E085BN
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160411 - Rev.000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet RQ6E085BN.PDF ] | |
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