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PDF RQ7E110AJ Data sheet ( Hoja de datos )
| Número de pieza | RQ7E110AJ | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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RQ7E110AJ
Nch 30V 11A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
9.0mΩ
±11A
1.5W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
HR
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
PD*4
Tj
Tstg
30
±11
±44
±12
11
18
1.5
1.1
150
-55 to +150
V
A
A
V
A
mJ
W
W
℃
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160515 - Rev.001
1 page  
RQ7E110AJ
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160515 - Rev.001
5 Page 
RQ7E110AJ
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160515 - Rev.001
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet RQ7E110AJ.PDF ] | |
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