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PDF RS3E095BN Data sheet ( Hoja de datos )

Número de pieza RS3E095BN
Descripción Power MOSFET ( Transistor )
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! RS3E095BN Hoja de datos, Descripción, Manual

RS3E095BN
  Nch 30V 9.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
14.6mΩ
±9.5A
2.0W
lFeatures
1) Low on - resistance.
2) Small surface mount package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
lOutline
SOP8
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
RS3E095BN
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
PD*4
Tj
Tstg
30
±9.5
±36
±20
9.5
12.9
2.0
1.4
150
-55 to +150
V
A
A
V
A
mJ
W
W
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160316 - Rev.000    

1 page




RS3E095BN pdf
RS3E095BN
      
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
        
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
     Junction Temperature
                                                                                          
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160316 - Rev.000

5 Page





RS3E095BN arduino
RS3E095BN
lDimensions
      
                Datasheet
                                                                                          
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
20160316 - Rev.000

11 Page







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