|
|
|
부품번호 | P0770ETFS 기능 |
|
|
기능 | N-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
N-Channel Enhancement Mode P0770ETF:TO-220F
Field Effect Transistor
P0770ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
1.4Ω
ID
7A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
700
±30
7
4
20
2.2
24
43
17
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.9
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
700
VDS = VGS, ID = 250A
2 2.6 4
VDS = 0V, VGS = ±30V
±100
VDS = 700V, VGS = 0V , TC = 25 °C
1
VDS = 560V, VGS = 0V , TC = 100 °C
10
V
nA
A
REV 1.0
1
F-16-5
NIKO-SEM
N-Channel Enhancement Mode P0770ETF:TO-220F
Field Effect Transistor
P0770ETFS:TO-220FS
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.9
Source-Drain Diode Forward Voltage
100
2.4
10
1.9
1.4
150℃
25℃
1
0.9
VGS=10V
ID=3.5A
0.4
-50
-25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
↓
10
1
0.1
0.01
10
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.9˚C/W
4.Single Pulse
100
VDS, Drain-To-Source Voltage(V)
1ms
10ms
100ms
DC
1000
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
800
700 Single Pulse
RθJC = 2.9˚C/W
600 TC=25˚C
500
400
300
200
100
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
10
REV 1.0
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
T1 , Square Wave Pulse Duration[sec]
1
4
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 2.9 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
F-16-5
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ P0770ETFS.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P0770ETF | N-Channel Enhancement Mode MOSFET | UNIKC |
P0770ETF | N-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |