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부품번호 | P0270ATF 기능 |
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기능 | N-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
N-Channel Enhancement Mode P0270ATF(S)
Field Effect Transistor
TO-220F:P0270ATF
TO-220FS:P0270ATFS
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
700V
RDS(ON)
6.3Ω
ID
2A
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±30
2
1
8
5
26
10
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH, starting TJ = 25°C
TYPICAL
MAXIMUM
4.7
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
700
2.5 3.8
4.5
V
VDS = 0V, VGS = ±30V
±100 nA
VDS = 700V, VGS = 0V
VDS = 560V, VGS = 0V, TJ = 125 °C
25
A
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
5.5 6.3
1.5
Ω
S
REV 2.1
1
D-16-5
NIKO-SEM
N-Channel Enhancement Mode P0270ATF(S)
Field Effect Transistor
TO-220F:P0270ATF
TO-220FS:P0270ATFS
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This
Area is Limited by
RDS(ON)
10
↓
1
0.1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 4.7˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
0.01
10
100 1000
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
150
Single Pulse
RθJC = 4.7˚C/W
120 TC=25˚C
90
60
30
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.05
0.1 0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 4.7 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV 2.1
4
D-16-5
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ P0270ATF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
P0270ATF | N-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
P0270ATF | N-Channel Enhancement Mode MOSFET | UNIKC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |