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PDF P0920BTF Data sheet ( Hoja de datos )
| Número de pieza | P0920BTF | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
P0920BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
0.42Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 2.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
200
±20
9
5.6
22
9
85
28
11
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
4.4
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
200
VDS = VGS, ID = 250A
12 3
VDS = 0V, VGS = ±20V
±100
VDS = 200V, VGS = 0V
1
VDS = 160V, VGS = 0V, TJ = 125 ° C
10
VGS = 4.5V, ID = 4.5A
0.34 0.48
VGS =10V, ID = 4.5A
0.32 0.42
V
nA
A
Ω
REV 1.0
1
D-48-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P0920BTF.PDF ] | |
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