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Número de pieza | ME4812 | |
Descripción | N-Channel 30-V(D-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME4812 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4812 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology integrated Schottky diode. This high density process is
especially tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other battery
powered circuits where high-side switching , and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● Integrated Schottky diode
● RDS(ON)≦13mΩ@VGS=10V
● RDS(ON)≦21.5mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Battery Powered System
● DC/DC Converter low side switching
● Load Switch
(SOP-8)
Top View
e Ordering Information: ME4812 (Pb-free)
ME4812-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150℃)*
TA=25℃
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation*
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
* The device mounted on 1in2 FR4 board with 2 oz copper
Limit
30
±20
11.3
8.9
45
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
℃
℃/W
June, 2009-Ver1.0
01
1 page ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
June, 2009-Ver1.0
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME4812.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME4812 | N-Channel 30-V(D-S) MOSFET | Matsuki |
ME4812-G | N-Channel 30-V(D-S) MOSFET | Matsuki |
ME4812B | N-Channel 30-V(D-S) MOSFET | Matsuki |
ME4812B-G | N-Channel 30-V(D-S) MOSFET | Matsuki |
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