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PDF ME4812-G Data sheet ( Hoja de datos )

Número de pieza ME4812-G
Descripción N-Channel 30-V(D-S) MOSFET
Fabricantes Matsuki 
Logotipo Matsuki Logotipo



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No Preview Available ! ME4812-G Hoja de datos, Descripción, Manual

ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4812 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology integrated Schottky diode. This high density process is
especially tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other battery
powered circuits where high-side switching , and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
Integrated Schottky diode
RDS(ON)13m@VGS=10V
RDS(ON)21.5m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter low side switching
Load Switch
(SOP-8)
Top View
e Ordering Information: ME4812 (Pb-free)
ME4812-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current( TJ =150)*
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
* The device mounted on 1in2 FR4 board with 2 oz copper
Limit
30
±20
11.3
8.9
45
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
℃/W
June, 2009-Ver1.0
01

1 page




ME4812-G pdf
ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
June, 2009-Ver1.0
05

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