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PDF A1887 Data sheet ( Hoja de datos )
| Número de pieza | A1887 | |
| Descripción | PNP Transistor - 2SA1887 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1887
High-Current Switching Applications
2SA1887
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max)
at IC = −5 A
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−80
−50
−7
−10
2.0
25
150
−55 to 150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = −70 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −1 V, IC = −1 A
IC = −5 A, IB = −0.25 A
IC = −5 A, IB = −0.25 A
VCE = −1 V, IC = −1 A
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −1 µA
― ― −1 µA
−50 ―
―
V
120 ― 400
― −0.2 −0.4
V
― −0.95 −1.4
V
― 45 ― MHz
― 215 ―
pF
Marking
A1887
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet A1887.PDF ] | |
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