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부품번호 | P3506DTF 기능 |
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기능 | P-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ
ID
-20A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
Tc = 25 °C
Tc = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-60
±25
-20
-10
-100
-38
72
26
10.4
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
4.8
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±25V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 55 °C
VGS = -7V, ID = -20A
VGS = -10V, ID = -20A
VDS = -5V, ID = -20A
LIMITS
UNIT
MIN TYP MAX
-60
-2 -2.7 -4
V
±100 nA
1
µA
10
34 55
mΩ
29 35
32 S
REV 0.92
Jul-29-2011
1
NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.0
1.8
Source-Drain Diode Forward Voltage
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS=-10V
ID=-20A
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
Safe Operating Area
150
Operation in This Area
is Limited by RDS(ON)
100
10
1ms
10ms
1
NOTE :
1.VGS= -10V
2.TC=25˚C
3.RθJC =4.8˚C/W
4.Single Pulse
0.1
100ms
DC
1 10 100
-VDS, Drain-To-Source Voltage(V)
10
125℃
25℃
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
300
240 Single Pulse
RθJC = 4.8 ˚C/W
TC=25˚C
180
120
60
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 4.8 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV 0.92
Jul-29-2011
4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ P3506DTF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
P3506DT | P-Channel Logic Level Enhancement Mode Field Effect Transistor | NIKO-SEM |
P3506DT | P-Channel Enhancement Mode MOSFET | UNIKC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |