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부품번호 | P0908ATF 기능 |
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기능 | N-Channel Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908ATF
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 9mΩ
ID
43A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
43
27
160
49
120
37
15
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
80
2 3.4
4
V
±100 nA
1
A
10
REV1.1
F-51-1
1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0908ATF
TO-220F
Halogen-Free & Lead-Free
Gate charge Characteristics
10
Source-Drain Diode Forward Voltage
100
VDS=40V
8 ID=20A
6
10
4
150℃
25℃
1
2
0
0 10 20 30 40 50
Qg , Total Gate Charge(nC)
Safe Operating Area
1000
Operation in This
Area is Limited by
RDS(ON)
100
60
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
Single Pulse Maximum Power Dissipation
600
Single Pulse
480 RθJC = 3.3˚C/W
TC=25˚C
10
1ms
10ms
1 NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 3.3˚C/W
4.Single Pulse
100ms
DC
0.1
0.1 1 10 100
VDS, Drain-To-Source Voltage(V)
1000
360
240
120
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
Transient Thermal Response Curve
10
100
REV1.1
1
Duty cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
single pulse
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 3.3 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
4
100
F-51-1
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ P0908ATF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
P0908AT | N-Channel Field Effect Transistor | NIKO-SEM |
P0908AT | N-Channel Enhancement Mode MOSFET | UNIKC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |