P8010BT Datasheet PDF - NIKO-SEM
| Part Number | P8010BT | |
| Description | N-Channel Field Effect Transistor | |
| Manufacturers | NIKO-SEM | |
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NIKO-SEM
N-Channel Enhancement Mode
P8010BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
17A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=0.1mH,VDD=50V
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
17
10
35
13
8.5
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS=80V, VGS=0V, TJ=125 °C
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 15A
LIMITS
MIN TYP MAX
UNIT
100
1.3 1.8 2.3
V
±100 nA
1
A
10
63 95 mΩ
61 85 mΩ
REV1.0
1
D-51-3
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P8010BT electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P8010BT.PDF Datasheet ] | |
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