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Datasheet P1060AT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P1060AT | N-Channel Enhancement Mode MOSFET P1060AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω @VGS = 10V
ID 10A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous |  UNIKC | mosfet |
| 2 | P1060ATF | N-Channel Enhancement Mode MOSFET P1060ATF(S)
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω @VGS = 10V
ID 10A
100% UIS tested
TO-220F(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltag | UNIKC | mosfet |
| 3 | P1060ATFS | N-Channel Enhancement Mode MOSFET P1060ATF(S)
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω @VGS = 10V
ID 10A
100% UIS tested
TO-220F(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltag | UNIKC | mosfet |
P10 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P100 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical de  International Rectifier data | | |
| 2 | P1000A | Silicon Rectifiers P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassif  Diotec Semiconductor rectifier | | |
| 3 | P1000A | (P1000x) Standard silicon rectifier diodes P 1000 A....P 1000 S
0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 2:: 7 $ 8 $ $ $ $ $ $ $ $
= ;
.
Axial lead diode Standard silicon rectifier diodes
P 1000 A....P 1000 S Forward Current: 10 A Re  Semikron International rectifier | | |
| 4 | P1000B | Silicon Rectifiers P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassif Diotec Semiconductor rectifier | | |
| 5 | P1000B | (P1000x) Standard silicon rectifier diodes P 1000 A....P 1000 S
0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 2:: 7 $ 8 $ $ $ $ $ $ $ $
= ;
.
Axial lead diode Standard silicon rectifier diodes
P 1000 A....P 1000 S Forward Current: 10 A Re Semikron International rectifier | | |
| 6 | P1000D | Silicon Rectifiers P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassif Diotec Semiconductor rectifier | | |
| 7 | P1000D | (P1000x) Standard silicon rectifier diodes P 1000 A....P 1000 S
0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 2:: 7 $ 8 $ $ $ $ $ $ $ $
= ;
.
Axial lead diode Standard silicon rectifier diodes
P 1000 A....P 1000 S Forward Current: 10 A Re Semikron International rectifier | |
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