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Datasheet P0460AD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P0460AD | N-Channel Enhancement Mode MOSFET P0460AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID 4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drai |  UNIKC | mosfet |
P04 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P0402FCxxC | FLIP CHIP ARRAY
05107
P0402FC3.3C*
thru
Only One Name Means ProT ek’Tion™
P0402FC36C*
FLIP CHIP ARRA Y
APPLICA TIONS ✔ Cellular Phones ✔ MCM Boards ✔ Wireless Communication Circuits ✔ IR LEDs ✔ SMART & PCMCIA Cards IEC COMPA TIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV,  Protek Devices data | | |
| 2 | P0402V05 | ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT 05392
Only One Name Means ProTek’Tion™
ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT
P0402V Series
DESCRIPTION
The P0402V Series is an ultra low capacitance ESD component designed to protect very high-speed data interfaces. These devices have a typical capactiance of only 0.05pF (I/O to GND) Protek Devices data | | |
| 3 | P0402V15 | ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT 05392
Only One Name Means ProTek’Tion™
ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT
P0402V Series
DESCRIPTION
The P0402V Series is an ultra low capacitance ESD component designed to protect very high-speed data interfaces. These devices have a typical capactiance of only 0.05pF (I/O to GND) Protek Devices data | | |
| 4 | P0403BD | N-Channel Enhancement Mode MOSFET P0403BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.3mΩ @VGS = 10V
ID 81A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dra UNIKC mosfet | | |
| 5 | P0403BDA | N-Channel Enhancement Mode MOSFET P0403BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.6mΩ @VGS = 10V
ID 77A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Dr UNIKC mosfet | | |
| 6 | P0403BDG | N-Channel Enhancement Mode MOSFET P0403BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 4mΩ @VGS = 10V
ID 84A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drai UNIKC mosfet | | |
| 7 | P0403BK | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P0403BK
NPAK SOP-8 Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30 4.0mΩ
ID 35A
D G
D DDD
G : GATE D : DRAIN S : SOURCE
S #1 S S S G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBO  NIKO-SEM transistor | |
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