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부품번호 | P6010DDG 기능 |
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기능 | N-Channel Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ
ID
-20A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-100
±20
-20
-12
-60
-54
149
50
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -80V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
-100
-1.5 -2.7
-60
V
-4
±250 nA
1
µA
10
A
REV 1.1
Apr-15-2010
1
NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Capacitance Characteristic
6.00E+03
Body Diode Forward Voltage VS Source current
1 .0 E + 0 2
5.00E+03
4.00E+03
3.00E+03
2.00E+03
Cis s
1.0E+01
1 .0 E + 0 0
1 .0 E - 0 1
1 .0 E -0 2
1.0E-03
TJ =150°C
TJ =25° C
1.00E+03
0.00E+00
Cos s
Cr s s
0 5 10 15 20 25
-VDS, Drain-To-Source Voltage(V)
30
Safe Operating Area
100
Operation in
This Area is
Lim ite d by RDS(ON)
↓
100us
10
1.0E-04
1.0E-05
0.1 0.3 0.5 0.7 0.9 1.1
-VSD, Source-To-Drain Voltage(V)
1.3
Single Pulse Maximum Power Dissipation
2000
1500
SINGLE PULSE
RθJC = 2.5˚ C/W
TC=25˚ C
1m s
1000
1 10m s
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 2.5˚ C/W
4.Single Pulse
1010Sm s
DC
0.1
0.1 1 10 100
-VDS, Drain-To-Source Voltage(V)
1000
500
0
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
1
10
1.00E+00
Duty Cycle=0.5
1.00E-01
0.2
0.1
0.05
0.02
0.01
single Pluse
1.00E-02
1.E-05
1.E-04
1.E-03
1.E-02
T1 , Square Wave Pulse Duration[sec]
REV 1.1
4
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 2.5 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E-01
1.E+00
Apr-15-2010
4페이지 NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
REV 1.1
Apr-15-2010
7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ P6010DDG.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P6010DDG | N-Channel Field Effect Transistor | NIKO-SEM |
P6010DDG | P-Channel Enhancement Mode MOSFET | UNIKC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |