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부품번호 | PA610AD 기능 |
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기능 | N-Channel Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100 160mΩ
ID
12A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAs
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
12
7
40
24
29
42
17
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 66V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
LIMITS
UNIT
MIN TYP MAX
100
2.0 3.2
4.0
V
±250 nA
1
µA
10
40 A
145 160 mΩ
2S
REV 1.0
Jun-03-2010
1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This
Area is Lim ited
by RDS(ON)
↓
10
100us
Single Pulse Maximum Power Dissipation
500
400
SINGLE PULSE
RθJC = 3˚ C/W
TC=25˚ C
300
1
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 3˚ C/W
4.Single Pulse
1m s
10m s
100m s
DC
0.1
1 10 100
VDS, Drain-To-Source Voltage(V)
200
100
0
1000
0.0001
0.001
0.01
0.1
1
Single Pulse Time(s)
10
1.00E+01
Transient Thermal Response Curve
1.00E+00
Duty Cycle =0.5
1.00E-01
0.2
0.1
0.05
0.02
0.01
1.00E-02
1.E-05
single Pluse
1.E-04
1.E-03
1.E-02
1.E-01
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 3 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E+00
1.E+01
REV 1.0
Jun-03-2010
4
4페이지 NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
REV 1.0
Jun-03-2010
7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ PA610AD.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
PA610AD | N-Channel Field Effect Transistor | NIKO-SEM |
PA610AD | N-Channel Enhancement Mode MOSFET | UNIKC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |