(PDF) P9006EI Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P9006EI
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
Logotipo
Hay una vista previa y un enlace de descarga de P9006EI (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM -18 -11 -50 Avalanche Current IAS -24 Avalanche Energy L = 0.1mH EAS 30 Power Dissipation TC = 25 °C TC = 100 °C PD 51 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.45 50 UNITS °C / W Ver 1.0 1 2012/4/12 1 page P9006EI P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/12 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet P9006EI.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF P9006EI Data sheet ( Hoja de datos )