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부품번호 | PA406EM 기능 |
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기능 | P-Channel Field Effect Transistor | ||
제조업체 | NIKO-SEM | ||
로고 | |||
NIKO-SEM
P-Channel Enhancement Mode
PA406EM
Mode Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60 140mΩ
ID
-2A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
1 :GATE
2 :DRAIN
3 :SOURCE
LIMITS
-60
±20
-2
-1.5
-7
0.8
0.5
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RθJA
150 °C / W
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 55°C
VDS = -5V, VGS = -10V
VGS = -10V, ID = -1.5A
VGS = -4.5V, ID = -1.5A
LIMITS
UNIT
MIN TYP MAX
-60
-1 -1.8
-3
V
±100 nA
-1
µA
-10
-7 A
93 140
mΩ
118 210
REV 0.9
1 Dec-26-2011
NIKO-SEM
P-Channel Enhancement Mode
PA406EM
Mode Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
On-Resistance VS Temperature
Source-Drain Diode Forward Voltage
2.0
VGS=-10V
1.8 ID=-1.5A
1.6
10
1.4
150℃
25℃
1.2 1
1.0
0.8
0.6
-25
0
25 50 75 100 125 150
0.1
0.0 0.3 0.6 0.9 1.2 1.5
TJ , Junction Temperature(˚C)
Safe Operating Area
-VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
Operation in This Area is
10 Limited by RDS(ON)
↓
1
25
20
1mS
15
0.1
0.01
NOTE :
1.VGS= 10V
2.TA=25˚C
3.RθJA =150˚C/W
4.Single Pulse
0.001
0.1
1
10mS
100mS
10S
DC
10 100
-VDS, Drain-To-Source Voltage(V)
10
5
0
0.001
Single Pulse
RθJA = 150˚C/W
TA=25˚C
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
REV 0.9
1
0.1
0.01
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.001
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJA = 150 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.01
0.1
1
10 100
T1 , Square Wave Pulse Duration[sec]
4
Dec-26-2011
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부품번호 | 상세설명 및 기능 | 제조사 |
PA406EM | P-Channel Enhancement Mode MOSFET | UNIKC |
PA406EM | P-Channel Field Effect Transistor | NIKO-SEM |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |