(PDF) P5102FM Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P5102FM
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P5102FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.5 -2.8 -21 Power Dissipation TA = 25 °C TA = 70 °C PD 1.0 0.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 120 60 UNITS °C / W REV 1.1 1 2014/7/28 1 page P5102FM P-Channel Enhancement Mode MOSFET REV 1.1 5 2014/7/28 5 Page

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PDF P5102FM Data sheet ( Hoja de datos )