(PDF) P6402FMG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P6402FMG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P6402FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 64mΩ @VGS = -4.5V ID -4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4 -3 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.25 0.8 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1% SYMBOL RqJA RqJC TYPICAL 75 MAXIMUM 100 60 UNITS °C / W REV 1.1 1 2014/7/28 1 page P6402FMG P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2014/7/28 5 Page

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PDF P6402FMG Data sheet ( Hoja de datos )