(PDF) P6002OAG Datasheet - N & P-Channel Enhancement Mode MOSFET

Número de pieza	P6002OAG
Descripción	N & P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P6002OAG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 60mΩ @VGS = 4.5V -20V 115mΩ @VGS = -4.5V ID 3.4A -2.5A Channel N P TSOP-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage VDS N 20 P -20 Gate-Source Voltage N ±8 VGS P ±8 Continuous Drain Current TA = 25 °C TA = 70 °C N 3.4 P -2.5 ID N 2.7 P -2 Pulsed Drain Current1 N 15 IDM P -15 Avalanche Current1 N 5.5 IAS P -12 Avalanche Energy L = 0.1mH N 1.5 EAS P 7.4 Power Dissipation TA = 25 °C TA = 70 °C N 1.14 P 1.14 PD N 0.72 P 0.72 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.2 1 2016/4/8 1 page P6002OAG N&P-Channel Enhancement Mode MOSFET REV 1.2 5 2016/4/8 5 Page P6002OAG N&P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 11 2016/4/8 11 Page

Páginas	Total 11 Páginas
PDF Descargar	[ Datasheet P6002OAG.PDF ]

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PDF P6002OAG Data sheet ( Hoja de datos )