(PDF) P5503QV Datasheet - N & P-Channel Enhancement Mode MOSFET

Número de pieza	P5503QV
Descripción	N & P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P5503QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 60mΩ @VGS = -10V ID 7.5A -4.5A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N 7.5 P -4.5 ID N 6 P -3.6 Pulsed Drain Current1 N 30 IDM P -20 Avalanche Current N 22 IAS P -21 Avalanche Energy L = 0.1mH N 24 EAS P 22 Power Dissipation TA = 25 °C TA = 70 °C N 2 P PD N 1.28 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/8/29 1 page P5503QV N&P-Channel Enhancement Mode MOSFET REV 1.0 5 2014/8/29 5 Page

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PDF P5503QV Data sheet ( Hoja de datos )