(PDF) P0403BVG Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P0403BVG
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P0403BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.5mΩ @VGS = 10V ID 18A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 18 15 80 Avalanche Current IAS 50 Avalanche Energy L = 0.3mH EAS 380 Power Dissipation TA= 25 °C TA =70 °C PD 2.5 1.6 Junction & Storage Temperature Range Lead Temperature(1/16” from case for 10 sec) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS °C / W REV 1.0 1 2014/9/19 1 page P0403BVG N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/19 5 Page

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PDF P0403BVG Data sheet ( Hoja de datos )