(PDF) PD1503BV Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PD1503BV
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PD1503BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = 10V ID 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 12 9 50 Avalanche Current IAS 28 Avalanche Energy L = 0.1mH EAS 39 Power Dissipation TA = 25 °C TA = 70 °C PD 3.1 2 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C ABSLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL SCHOTTKY Reverse Current VR = 45V IR 0.06 Forward Voltage IF = 2A VF 0.49 UNITS A V THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 40 °C / W Ver 1.0 1 2012/4/16 1 page PD1503BV N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16 5 Page

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PDF PD1503BV Data sheet ( Hoja de datos )