(PDF) PD1503YVS-A Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PD1503YVS-A
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PD1503YVS-A Dual N- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) Q2 30V 15.5mΩ @VGS = 10V Q1 30V 18mΩ @VGS = 10V ID 9A 8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 70 °C Avalanche Energy L =0.1mH Power Dissipation TA = 25 °C TA = 70 °C Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 30 30 ±20 ±20 98 76 35 30 29 21 42 24 2 1.28 -55 to 150 UNITS V V A mJ W °C ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Schottky Reverse Current VR = 25V IR 0.05 Forward Voltage IF = 1A VF 0.45 UNITS mA V REV 1.0 1 2014-3-10 1 page PD1503YVS-A Dual N- Channel Enhancement Mode MOSFET REV 1.0 5 2014-3-10 5 Page

Páginas	Total 8 Páginas
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PDF PD1503YVS-A Data sheet ( Hoja de datos )