(PDF) PB544DU Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PB544DU
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PB544DU N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 13.5mΩ @VGS = 10V ID 10A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70°C ID IDM 10 8.2 40 Avalanche Current IAS 17 Avalanche Energy3 EAS 14.4 Power Dissipation TA= 25 °C TA= 70 °C PD 2.3 1.4 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 54 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2013-12-16 1 page

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PDF PB544DU Data sheet ( Hoja de datos )