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B20NM50FD PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 B20NM50FD
기능 N-CHANNEL POWER MOSFET
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B20NM50FD 데이터시트, 핀배열, 회로
STB20NM50FD
STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)
Features
Type
VDSS
RDS(on)
max
RDS(on)*
Qg
ID
STB20NM50FD 500 V < 0.25 8.36 * nC
STF20NM50FD 500 V < 0.25 8.36 * nC
STP20NM50FD 500 V < 0.25 8.36 * nC
20 A
20 A
20 A
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Tight process control and high manufacturing
yields
Application
Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB20NM50FD
STF20NM50FD
STP20NM50FD
B20NM50FD
F20NM50FD
P20NM50FD
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
April 2008
Rev 9
1/16/
www.st.com
16




B20NM50FD pdf, 반도체, 판매, 대치품
Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA, VGS= 0
500
VDS = Max rating,
VDS = Max rating,@125 °C
VGS = ± 30 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 10 A
3
1
10
± 100
45
0.22 0.25
V
µA
µA
nA
V
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID= 10 A
9
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f =1 MHz,
VGS = 0
1380
290
40
pF
pF
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
130
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
2.8
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 400 V, ID = 20 A
VGS = 10 V
(see Figure 16)
38 53 nC
18 nC
10 nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16

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B20NM50FD 전자부품, 판매, 대치품
STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical characteristics
Figure 8. Transconductance
Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
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부품번호상세설명 및 기능제조사
B20NM50FD

N-CHANNEL POWER MOSFET

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