(PDF) PE544JZ Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PE544JZ
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE544JZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 8.5mΩ @VGS = 4.5V ID 39A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C 39 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 24 12 Pulsed Drain Current1 TA = 70 °C IDM 9.7 60 Avalanche Current IAS 23.5 Avalanche Energy L = 0.1mH EAS 27.6 TC = 25 °C 23 Power Dissipation TC = 100 °C TA = 25 °C PD 9.4 2.2 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RJA 55 Junction-to-case RJC 5.3 1Pulse width limited by maximum junction temperature. 2Package limitation current is 24A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.2 1 2016/5/25 1 page PE544JZ Dual N-Channel Enhancement Mode MOSFET REV 1.2 5 2016/5/25 5 Page

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PDF PE544JZ Data sheet ( Hoja de datos )