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PDF PE606DT Data sheet ( Hoja de datos )
| Número de pieza | PE606DT | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
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PE606DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
Q2 30V
RDS(ON)
11mΩ @VGS = 10V
Q1 30V
16mΩ @VGS = 10V
ID
30A
23A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
30
17
40
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
9.4
7.5
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
14
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
19
7.6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.8
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1
30
±20
23
14
32
7.3
5.8
12
7
16
6
1.6
1
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
RqJA
Q2
Q1
67
77
Junction-to-case
RqJC
RqJC
Q2
Q1
6.5
7.5
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is 11A.
UNITS
°C / W
REV 1.1
1 2015/11/12
1 page  
PE606DT
Dual N-Channel Enhancement Mode MOSFET
REV 1.1
5 2015/11/12
5 Page 
PE606DT
Dual N-Channel Enhancement Mode MOSFET
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标签内容(Label content)
REV 1.1
11 2015/11/12
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PE606DT.PDF ] | |
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