(PDF) PE5C6JZ Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PE5C6JZ
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE5C6JZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 24V 5.5mΩ @VGS = 4.5V ID 54A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 24 Gate-Source Voltage VGS ±12 TC = 25 °C 54 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 34 16 Pulsed Drain Current1 TA= 70 °C IDM 13 90 Avalanche Current IAS 28 Avalanche Energy L =0.1mH EAS 39 TC = 25 °C 27 Power Dissipation TC = 100 °C TA = 25 °C PD 11 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 50 Junction-to-Case RqJC 4.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 13A. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2016/7/20 1 page PE5C6JZ Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/7/20 5 Page

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PDF PE5C6JZ Data sheet ( Hoja de datos )